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Product Spotlight
July 16, 2020
 
 
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650 V CoolSiC™ MOSFETs deliver top performance, high reliability and ease of use

The 650 V CoolSiC™ MOSFETs are built on a state-of-the-art trench process, optimized for the lowest losses and the highest reliability. Infineon’s CoolSiC™ MOSFET technology leverages the strong properties of SiC, adding unique features which increase the device performance, robustness and ease of use. This enables engineers to easily design systems, which are more efficient, compact, reliable and cost effective.

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600 V CoolMOS™ S7 MOSFETs offer best price/performance for low switching applications

Optimized for low frequency switching applications, Infineon’s 600 V CoolMOS™ S7 MOSFETs feature minimized conduction losses, improved thermal resistance, and high-pulse current capability and deliver best price/performance at the highest quality standards. MOSFETs are available in an innovative small TO-leadless (TOLL) SMD package with 22 mΩ RDS(on) and will soon be offered in a top-side-cooled SMD package with only 10 mΩ RDS(on) . Key applications include active bridge rectification, inverter stages, PLCs, power solid-state relay and solid-state circuit breakers.

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600 V CoolMOS™ PFD7 series enables the next level of ultrahigh power-density designs

Infineon broadens its CoolMOS™ portfolio with the PFD7 product family combining best-in-class performance with ease of use. CoolMOS™ PFD7 addresses the strongly growing market for high power-density applications such as chargers and adapters as well as low-power drives and specific lighting applications. With its robustness and high reliability, PFD7 offers cost competiveness, increased efficiency, minimized switching losses and improved thermal behavior making this product family the ultimate choice for ultra-high power density designs.

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650 V CoolMOS™ CFD7A makes automotive applications compact and high performing

Infineon recently launched its new CoolMOS™ CFD7A product family. These silicon-based, high-performance products can be used in both the PFC and DC-DC stage of on-board charger systems and HV-LV DC-DC converters specifically optimized for electric-vehicle applications.  CoolMOS™ CFD7A series enables high power density for more compact design and increases design flexibility and scalability due to its intrinsic fast body diode and a broad package portfolio line up. Additionally, with improved cosmic-radiation robustness, the CoolMOS™ CFD7A displays the highest reliability compliant with automotive lifetime requirements.

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25V PQFN 3.3x3.3 Source-Down package addresses power management challenges

Infineon has introduced a new package innovation where the silicon is flipped upside down. Instead of the drain being connected to the thermal pad, the source is connected to it. This offers significant benefits over the current solutions on the market including 30% lower RDS(on), improved thermal performance and an optimized layout for thermal management. Target applications include Drives, Telecom, SMPS and Servers.

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StrongIRFET™ MOSFETs in D2PAK-7pin + for battery powered applications

The new StrongIRFET 40 V-60 V MOSFET family in the D2PAK-7pin+ package offers extremely low RDS(on) and high current capability increasing robustness and reliability for high power density applications which require high efficiency and reliability. These new devices target battery powered applications including battery-powered tools, battery management systems, and low voltage drives.

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OptiMOS™ 5 MOSFETs 40 V normal level in SuperSO8

The new OptiMOS 5 40 V normal level product family is optimized for immunity against unwanted induced turn-on, which often occurs in real-life applications and causes increased power dissipation leading to over-heating and in extreme cases failure of the end-equipment. The family features a maximum junction temperature of 175°C, low gate charge, strong linear mode and high current capability. Target applications include battery powered applications, battery powered tools, battery management and low voltage drives.

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