Electronic Design Power & Analog Update  |   To view this email as a web page, click here.
 
 
Electronic Design Power & Analog Update
October 20, 2021
 

Get more from your GaN-based digital power designs with a C2000™ MCU

Learn how the TI C2000 real-time MCUs and GaN FETs work in harmony to provide a flexible and simple solution for modern digital power systems, while still providing cutting-edge features that enable power-dense and efficient digital power systems.

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Products

 
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The new LMG3422R050 50-mΩ 600-V GaN FET is a single-chip solution with the fastest integrated gate driver and self-protection for applications ranging from sub-100 W to 10 kW.


 
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A Real-time microcontroller for processing and control needs

The C2000™ TMS320F28388D real-time MCU is a high-performance device specifically designed for control with 1.5-MB flash, and an additional connectivity manager that supports EtherCAT and CAN-FD.

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Reduce onboard chargers by 50% with GaN

Auto-qualified GaN FETs reduce the size of EV onboard chargers and DC/DC converters by as much as 50% compared to existing Si or SiC solutions, offering an extended battery range.

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Videos

 

GaN FETs: High power density and efficiency in PFC designs

Learn how to use an integrated GaN FET to achieve high power density and efficiency in Power Factor Correction (PFC) and high-voltage DC/DC converters. 

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GaN demystified – Frequently asked questions

This video will help you understand the basics of the GaN technology and products (including competitive advantages) and help answer the most commonly asked questions.

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6.6-kW OBC with GaN and C2000™ real-time MCUs demo

Watch this demo of the industry first automotive GaN FET with integrated gate driver, protection, reporting and active power management, featuring a top cooled surface mount package to simplify production and heat dissipation.

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High efficiency PFC stage using GaN and C2000™ real-time control MCUs

Watch how GaN power FETs and C2000™ MCUs enable a totem-pole Power Factor Correction (PFC) topology, eliminating bridge rectifier power losses, featuring greater than 100V/ns dV/dt for the lowest switching losses and 80 plus titanium efficiencies.

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Whitepapers

 

Achieve power-dense and efficient digital power systems by combining TI GaN FETs and C2000™ Real-Time MCUs

Read this whitepaper to learn how the features of TI GaN FETs with an integrated driver and TI C2000™ real-time MCUs work in harmony to solve issues that power electronics designers face when developing modern power conversion systems.

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Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC

GaN and SiC FETs enable higher levels of power density and efficiency compared to traditional silicon MOSFETs. This paper examines the differences between the two technologies, including switching performance, cost and applications.

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Achieving GaN products with lifetime reliability

Learn more about how TI’s GaN products have achieved reliability in applications through a comprehensive in-house program ranging from epitaxial growth, application reliability validation, and the industry support of new GaN standards.

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Optimizing GaN performance with an integrated driver

Integrating GaN FETs with their drivers improves switching performance and simplifies GaN-based power-stage designs. Learn how GaN transistors can switch much faster than silicon MOSFETs, thus having the potential to achieve lower switching losses.

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